PTF210451E V1

PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS ® FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. VDD = 28 V, IDQ = 580 mA, ƒC = 2017.5 MHz Efficiency Adj Low er Alt Low er Alt Upper -38 20 -42 15 -46 ACPR (dBc) Adj Upper Efficiency (%) PTF210451F Package H-31265-2 Features 3-Carrier TD-SCDMA Drive-up 25 PTF210451E Package H-30265-2 • Thermally-enhanced packages, Pb-free and RoHS-compliant • Internal matching for wideband performance • Typical three-carrier TD-SCDMA performance - Average output power = 3 W - Gain = 14 dB - Efficiency = 12.5% - ACPR = –50 dBc • Typical CW performance - Output power at P–1dB = 50 W - Linear gain = 14 dB - Efficiency = 53% 10 -50 5 -54 • Integrated ESD protection: Human Body Model, Class 1 (minimum) 0 -58 • Excellent thermal stability • Low HCI Drift • Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power 0.0 3.0 6.0 9.0 Output Power (W) RF Characteristics WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, POUT = 11.5 W AVG ƒ1 = 2140 MHz, ƒ2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Intermodulation Distortion IMD — –37 — dBc Gain Gps — 14 — dB Drain Efficiency ηD — 27 — % All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 06, 2008-02-13 PTF210451E PTF210451F RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 13 14 — dB Drain Efficiency ηD 35 38 — % Intermodulation Distortion IMD — –32 –30 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.2 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 500 mA VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 175 W 1.0 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 1.0 °C/W Ordering Information Type and Version Package Outline Package Description Marking PTF210451E V1 H-30265-2 Thermally-enhanced slotted flange, single-ended PTF210451E PTF210451F H-31265-2 Thermally-enhanced earless flange, single-ended PTF210451F V1 *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 06, 2008-02-13 PTF210451E PTF210451F Typical Performance (data taken in production test fixture) Broadband Performance Power Sweep, CW Conditions VDD = 28 V, IDQ = 500 mA, POUT = 40 dBm VDD = 28 V, IDQ = 500 mA, ƒ = 2170 MHz 30 17 0 60 20 -10 -15 15 Gain 10 5 -20 -25 Input Retrun Loss 0 2070 2105 2140 2175 16 50 15 40 Gain 14 30 13 20 12 -30 2210 Drain Efficiency (%) -5 Gain (dB) Efficiency 25 Input Return Loss (dB) Gain (dB), Efficiency (%) Efficiency 10 34 36 38 40 42 44 46 48 Output Power (dBm) Frequency (MHz) Intermodulation Distortion vs. Output Power for selected currents Intermodulation Distortion Products vs. Tone Spacing VDD = 28 V, ƒ = 2140 MHz, tone spacing = 1 MHz VDD = 28 V, IDQ = 500 mA, ƒ = 2140 MHz, POUT = 45 W PEP -30 -25 -35 -30 3rd Order -35 -40 0.60 A IMD (dBc) IMD (dBc) 0.40 A -45 -50 -40 5th Order -45 -50 -55 0.45 A 0.55 A 0.50 A 7th Order -55 -60 -60 34 36 38 40 42 44 46 48 0 Data Sheet 10 20 30 40 Tone Spacing (MHz) Output Power, PEP (dBm) 3 of 10 Rev. 06, 2008-02-13 PTF210451E PTF210451F Typical Performance (cont.) Two-tone Drive-Up Single-carrier WCDMA Drive-Up VDD = 28 V, IDQ = 500 mA, ƒ = 2140 MHz, tone spacing = 1 MHz VDD = 28 V, IDQ = 500 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67% clipping, P/A R = 8.7 dB, 3.84 MHz BW 40 Efficiency IMD (dBc) -35 35 -40 30 -45 25 IM3 20 -50 -55 15 IM5 IM7 -60 Efficiency 36 38 40 42 44 46 25 -45 20 -50 15 ACPR Up 5 -60 48 30 32 Peak Output Power (dBm) 0 40 35 -15 30 IM3 Up 25 Gain 20 15 -35 10 -40 5 -45 0 24 25 26 27 28 29 30 31 32 33 Supply Voltage (V) Data Sheet Normalized Bias Voltage 3rd Order IMD (dBc) Efficiency 23 40 42 1.03 Gain (dB), Drain Efficiency (%) 45 -5 -30 38 Voltage normalized to typical gate voltage. Series show current. 50 -25 36 Bias Voltage vs. Case Temperature IDQ = 500 mA, ƒ = 2140 MHz, POUT = 44.75 dBm (PEP), tone spacing = 1 MHz -20 34 Avgerage Output Power (dBm) IM3, Gain & Drain Efficiency vs. Supply Voltage -10 10 ACPR Low 5 34 -40 -55 10 -65 30 -35 Drain Efficiency (%) -30 ACPR (dB) 45 Drain Efficiency (%) -25 4.50 A 1.02 3.75 A 1.01 3.00 A 1.00 2.25 A 0.99 1.50 A 0.75 A 0.98 0.97 0.96 -20 5 30 55 80 105 Case Temperature (ºC) 4 of 10 Rev. 06, 2008-02-13 PTF210451E PTF210451F Typical Performance (cont.) 4-Carrier TD-SCDMA Drive-up 6-Carrier TD-SCDMA Drive-up VDD = 28 V, IDQ = 580 mA, ƒC = 2017.5 MHz VDD = 28 V, IDQ = 580 mA, ƒC = 2017.5 MHz Efficiency Alt Low er Adj Low er Alt Upper Efficiency Adj Low er 25 -38 -42 15 -46 10 -50 -54 5 -54 -58 0 15 -46 10 -50 5 0 4.0 6.0 Efficiency (%) 20 -42 ACPR (dBc) Efficiency (%) Adj Upper 2.0 -38 Adj Upper 20 0.0 Alt Low er Alt Upper 8.0 ACPR (dBc) 25 -58 0.0 Output Power (W) 2.0 4.0 6.0 8.0 Output Power (W) E Broadband Circuit Impedance Data Z Source Ω 0.1 Z Source jX R jX 2070 5.72 –9.36 4.94 –0.87 2110 5.17 –8.97 4.90 –0.69 2140 4.88 –8.52 4.96 –0.60 2170 4.59 –8.16 4.96 –0.49 2210 4.08 –7.79 4.88 –0.39 5 of 10 2210 MHz W